IPA50R140CPXK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

616 mJ

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Pbfree Code :

yes

Qualification Status :

Not Qualified

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.14Ohm

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

23A

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

56A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

500V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Surface Mount :

No

Series :

CoolMOS™

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 930μA

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

2540pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Power Dissipation-Max :

34W Tc

Published :

2008

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Elements :

1

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

140m Ω @ 14A, 10V