IPA50R950CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Series :

CoolMOS™

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 100µA

Pulsed Drain Current-Max (IDM) :

12.8A

Drain-source On Resistance-Max :

0.95Ohm

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

Pin Count :

3

Avalanche Energy Rating (Eas) :

68 mJ

Reach Compliance Code :

Compliant

FET Feature :

Super Junction

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs (Max) :

±20V

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

231pF @ 100V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Number of Elements :

1

Power Dissipation-Max :

25.7W Tc

Pbfree Code :

yes

Surface Mount :

No

DS Breakdown Voltage-Min :

500V

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.2A, 13V

Operating Temperature :

-40°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

13V

Drain to Source Voltage (Vdss) :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON