IPA50R800CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

6 Weeks

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Pin Count :

3

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

800m Ω @ 1.5A, 13V

Packaging :

Tube

Series :

CoolMOS™

Drain-source On Resistance-Max :

0.8Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

500V

Transistor Element Material :

SILICON

Power Dissipation-Max :

26.4W Tc

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

13V

FET Feature :

Super Junction

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 10V

Mounting Type :

Through Hole

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Vgs (Max) :

±20V

Published :

2008

DS Breakdown Voltage-Min :

500V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

83 mJ

Pulsed Drain Current-Max (IDM) :

15.5A

Number of Terminations :

3

Number of Elements :

1

Reach Compliance Code :

Compliant

Operating Temperature :

-40°C~150°C TJ