IPA50R650CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Published :

2013

Avalanche Energy Rating (Eas) :

102 mJ

Pulsed Drain Current-Max (IDM) :

19A

Case Connection :

Isolated

Pbfree Code :

yes

Series :

CoolMOS™

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

27.2W Tc

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

-40°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

342pF @ 100V

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

6.1A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Number of Elements :

1

DS Breakdown Voltage-Min :

500V

Drive Voltage (Max Rds On,Min Rds On) :

13V

Terminal Position :

Single

FET Feature :

Super Junction

Current - Continuous Drain (Id) @ 25°C :

6.1A Tc

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

650m Ω @ 1.8A, 13V

Drain-source On Resistance-Max :

0.65Ohm