IPA50R520CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Terminal Finish :

Tin (Sn)

Case Connection :

Isolated

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

166 mJ

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

66W Tc

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

31A

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.52Ohm

Terminal Position :

Single

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

7A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Reach Compliance Code :

Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

520m Ω @ 3.8A, 10V

Operating Temperature :

-40°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

500V

Published :

2011

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc

Pin Count :

3

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

500V

Surface Mount :

No

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

JESD-609 Code :

e3

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Series :

CoolMOS™