IPA50R520CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

166 mJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Published :

2011

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Pin Count :

3

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

7A

JESD-609 Code :

e3

Series :

CoolMOS™

Drain-source On Resistance-Max :

0.52Ohm

Rds On (Max) @ Id, Vgs :

520m Ω @ 3.8A, 10V

Surface Mount :

No

Power Dissipation-Max :

66W Tc

Pulsed Drain Current-Max (IDM) :

31A

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.5V @ 250µA