IPA50R500CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

12 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Halogen Free :

Halogen Free

Rise Time :

5ns

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Factory Lead Time :

18 Weeks

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

500V

Published :

2008

Packaging :

Tube

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Turn On Delay Time :

6 ns

Power Dissipation-Max :

28W Tc

Turn-Off Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

24A

Rds On (Max) @ Id, Vgs :

500m Ω @ 2.3A, 13V

Series :

CoolMOS™ CE

Input Capacitance (Ciss) (Max) @ Vds :

433pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

129 mJ

Gate Charge (Qg) (Max) @ Vgs :

18.7nC @ 10V

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Through Hole

Number of Pins :

3

Continuous Drain Current (ID) :

5.4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

13V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.5Ohm