IPA50R500CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

13V

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

129 mJ

Pin Count :

3

Terminal Position :

Single

Power Dissipation-Max :

28W Tc

Pbfree Code :

yes

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

500V

Gate Charge (Qg) (Max) @ Vgs :

18.7nC @ 10V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

24A

Series :

CoolMOS™

Surface Mount :

No

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Published :

2008

DS Breakdown Voltage-Min :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

500m Ω @ 2.3A, 13V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Super Junction

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

433pF @ 100V

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.5Ohm