IMT1AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Cut Tape (CT)

Collector Emitter Saturation Voltage :

-500mV

Current Rating :

-150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Number of Pins :

6

Gain Bandwidth Product :

140MHz

Transition Frequency :

140MHz

hFE Min :

120

Power Dissipation :

300mW

Number of Elements :

2

Factory Lead Time :

13 Weeks

HTS Code :

8541.21.00.75

Width :

1.6mm

VCEsat-Max :

0.5 V

Collector Emitter Voltage (VCEO) :

50V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Voltage - Rated DC :

-50V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.1mm

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Package / Case :

SC-74, SOT-457

Length :

2.9mm

Element Configuration :

Dual

ECCN Code :

EAR99

Max Collector Current :

150mA

Radiation Hardening :

No

Published :

1996

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

6

Base Part Number :

*MT1

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Terminations :

6

Transistor Type :

2 PNP (Dual)

Collector Base Voltage (VCBO) :

-60V

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

-6V

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Polarity :

PNP

Max Power Dissipation :

300mW

Max Breakdown Voltage :

50V

Max Frequency :

100MHz