IMT17T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pin Count :

6

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Transistor Type :

2 PNP (Dual)

Max Power Dissipation :

300mW

Base Part Number :

MT17

Terminal Finish :

TIN SILVER COPPER

Pbfree Code :

yes

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA 3V

hFE Min :

120

Collector Base Voltage (VCBO) :

-60V

Number of Elements :

2

Gain Bandwidth Product :

200MHz

Voltage - Rated DC :

-50V

Max Collector Current :

500mA

Collector Emitter Voltage (VCEO) :

600mV

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

10

Current Rating :

-500mA

Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

600mV @ 50mA, 500mA

Transistor Element Material :

SILICON

Package / Case :

SC-74, SOT-457

Max Breakdown Voltage :

50V

Mount :

Surface Mount

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

HTS Code :

8541.21.00.75

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e1

Emitter Base Voltage (VEBO) :

-5V

Transition Frequency :

200MHz