IMT17-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Gain Bandwidth Product :

200MHz

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

-600mV

Number of Elements :

2

Pin Count :

6

Max Collector Current :

500mA

Peak Reflow Temperature (Cel) :

260

Polarity :

PNP

Length :

3mm

Collector Emitter Voltage (VCEO) :

50V

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA 3V

Frequency :

200MHz

Collector Base Voltage (VCBO) :

60V

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Width :

1.6mm

Mount :

Surface Mount

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Factory Lead Time :

19 Weeks

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Base Part Number :

MT17

Transistor Element Material :

SILICON

Height :

1.1mm

Transistor Type :

2 PNP (Dual)

Weight :

29.993795mg

Max Power Dissipation :

300mW

Element Configuration :

Dual

JESD-609 Code :

e3

Number of Terminations :

6

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

600mV @ 50mA, 500mA

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6

Transition Frequency :

200MHz