IMT18T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

12V

Transistor Type :

2 PNP (Dual)

Published :

2010

JESD-609 Code :

e1

Factory Lead Time :

13 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Operating Temperature :

150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-74, SOT-457

Time@Peak Reflow Temperature-Max (s) :

10

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 10mA 2V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

500mA

Number of Pins :

6

Number of Elements :

2

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Radiation Hardening :

No

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 200mA

Transition Frequency :

260MHz

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

15V

Mounting Type :

Surface Mount

Max Collector Current :

500mA

Gain Bandwidth Product :

260MHz

Polarity :

PNP

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

12V

Pin Count :

6

ECCN Code :

EAR99