IMT18T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 10mA 2V

Collector Base Voltage (VCBO) :

15V

Max Power Dissipation :

300mW

Pin Count :

6

Mount :

Surface Mount

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Element Configuration :

Dual

Number of Pins :

6

Transistor Type :

2 PNP (Dual)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Polarity :

PNP

Time@Peak Reflow Temperature-Max (s) :

10

Max Collector Current :

500mA

Current - Collector (Ic) (Max) :

500mA

Packaging :

Tape and Reel (TR)

Transition Frequency :

260MHz

Package / Case :

SC-74, SOT-457

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

6V

Published :

2010

Terminal Form :

Gull wing

Number of Terminations :

6

Lead Free :

Lead Free

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Factory Lead Time :

13 Weeks

Operating Temperature :

150°C TJ

JESD-609 Code :

e1

Gain Bandwidth Product :

260MHz

Collector Emitter Voltage (VCEO) :

12V

Collector Emitter Breakdown Voltage :

12V

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 200mA

HTS Code :

8541.21.00.75