IMT18T110
- Mfr.Part #
- IMT18T110
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS 2PNP 12V 0.5A 6SMT
- Stock
- 3,082
- In Stock :
- 3,082
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Packaging :
- Tape and Reel (TR)
- Polarity :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- SC-74, SOT-457
- Current - Collector (Ic) (Max) :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- HTS Code :
- 8541.21.00.75
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- Number of Pins :
- 6
- Mount :
- Surface Mount
- Element Configuration :
- Dual
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2010
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 10mA 2V
- Gain Bandwidth Product :
- 260MHz
- Transistor Type :
- 2 PNP (Dual)
- Number of Elements :
- 2
- Collector Emitter Breakdown Voltage :
- 12V
- Transition Frequency :
- 260MHz
- ECCN Code :
- EAR99
- Number of Terminations :
- 6
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 13 Weeks
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 15V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Datasheets
- IMT18T110
IMT18T110 Documents

IMT18T110 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ROHM Semiconductor stock available at
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