IMT1AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Transition Frequency :

140MHz

Number of Terminations :

6

hFE Min :

120

Collector Base Voltage (VCBO) :

-60V

Mount :

Surface Mount

HTS Code :

8541.21.00.75

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power - Max :

300mW

Collector Emitter Saturation Voltage :

-500mV

Number of Elements :

2

Transistor Application :

AMPLIFIER

Base Part Number :

*MT1

Package / Case :

SC-74, SOT-457

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

500mV

Radiation Hardening :

No

Max Collector Current :

150mA

Element Configuration :

Dual

Terminal Form :

Gull wing

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Polarity :

PNP

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Pin Count :

6

Published :

2008

Number of Pins :

6

Transistor Type :

2 PNP (Dual)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Element Material :

SILICON

JESD-609 Code :

e1

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

VCEsat-Max :

0.5 V

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

-6V

Collector Emitter Breakdown Voltage :

50V

Gain Bandwidth Product :

140MHz