FZT857TC
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- Mfr.Part #
- FZT857TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 3.5A SOT223-3
- Stock
- 37,590
- In Stock ：
- 37,590
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 300V
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Max Power Dissipation :
- 3W
- Voltage - Rated DC :
- 300V
- Gain Bandwidth Product :
- 80MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Terminal Finish :
- MATTE TIN
- Polarity/Channel Type :
- NPN
- Base Part Number :
- FZT857
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 3.5A
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Current Rating :
- 3.5A
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- Collector Base Voltage (VCBO) :
- 350V
- Max Collector Current :
- 3.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-30 Code :
- R-PDSO-G4
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 345mV @ 600mA, 3.5A
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Voltage (VCEO) :
- 345mV
- Peak Reflow Temperature (Cel) :
- 260
- Configuration :
- Single
- Transition Frequency :
- 80MHz
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Weight :
- 7.994566mg
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- COLLECTOR
- HTS Code :
- 8541.29.00.75
- REACH SVHC :
- No SVHC
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Surface Mount
- Datasheets
- FZT857TC
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT857TC Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 345mV @ 600mA, 3.5A.Continuous collector voltages of 3.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 3.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 3.5A volts.
FZT857TC Features
the DC current gain for this device is 100 @ 500mA 10V
the vce saturation(Max) is 345mV @ 600mA, 3.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3.5A
a transition frequency of 80MHz
FZT857TC Applications
There are a lot of Diodes Incorporated
FZT857TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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