FZT855TA
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- Mfr.Part #
- FZT855TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 150V 5A SOT223-3
- Stock
- 1,869
- In Stock ：
- 1,869
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 150V
- Base Part Number :
- FZT855
- Max Collector Current :
- 5A
- Mount :
- Surface Mount
- Weight :
- 7.994566mg
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Height :
- 1.65mm
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 150V
- Number of Pins :
- 3
- Pbfree Code :
- No
- Published :
- 2006
- Voltage - Rated DC :
- 150V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 90MHz
- Terminal Position :
- Dual
- Max Power Dissipation :
- 3W
- Frequency :
- 90MHz
- Max Breakdown Voltage :
- 150V
- Packaging :
- Cut Tape (CT)
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 15 Weeks
- Current Rating :
- 5A
- Length :
- 6.7mm
- Collector Emitter Saturation Voltage :
- 355mV
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 90MHz
- Collector Base Voltage (VCBO) :
- 250V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 355mV @ 500mA, 5A
- Element Configuration :
- Single
- Power Dissipation :
- 3W
- JESD-30 Code :
- R-PDSO-G4
- Width :
- 3.7mm
- Continuous Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- REACH SVHC :
- No SVHC
- Datasheets
- FZT855TA
FZT855TA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT855TA Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 355mV.A VCE saturation (Max) of 355mV @ 500mA, 5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 90MHz.A breakdown input voltage of 150V volts can be used.A maximum collector current of 5A volts is possible.
FZT855TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 355mV
the vce saturation(Max) is 355mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 90MHz
FZT855TA Applications
There are a lot of Diodes Incorporated
FZT855TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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