FZT855TA
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- Mfr.Part #
- FZT855TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 150V 5A SOT223-3
- Stock
- 1,869
- In Stock ：
- 1,869
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 150V
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Published :
- 2006
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Length :
- 6.7mm
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Element Configuration :
- Single
- Max Power Dissipation :
- 3W
- Pbfree Code :
- No
- JESD-30 Code :
- R-PDSO-G4
- Vce Saturation (Max) @ Ib, Ic :
- 355mV @ 500mA, 5A
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 15 Weeks
- Current Rating :
- 5A
- Terminal Position :
- Dual
- Frequency :
- 90MHz
- Power Dissipation :
- 3W
- Packaging :
- Cut Tape (CT)
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 150V
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Width :
- 3.7mm
- Max Collector Current :
- 5A
- Weight :
- 7.994566mg
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 90MHz
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Base Voltage (VCBO) :
- 250V
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 90MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 150V
- Continuous Collector Current :
- 5A
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 355mV
- Height :
- 1.65mm
- ECCN Code :
- EAR99
- Base Part Number :
- FZT855
- Collector Emitter Voltage (VCEO) :
- 150V
- Datasheets
- FZT855TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT855TA Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 355mV.A VCE saturation (Max) of 355mV @ 500mA, 5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 90MHz.A breakdown input voltage of 150V volts can be used.A maximum collector current of 5A volts is possible.
FZT855TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 355mV
the vce saturation(Max) is 355mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 90MHz
FZT855TA Applications
There are a lot of Diodes Incorporated
FZT855TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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