FZT853TA
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- Mfr.Part #
- FZT853TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A SOT223-3
- Stock
- 5,440
- In Stock ：
- 5,440
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.7mm
- Max Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 3W
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Width :
- 3.7mm
- Height :
- 1.65mm
- Gain Bandwidth Product :
- 130MHz
- Weight :
- 7.994566mg
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 4
- Terminal Form :
- Gull wing
- Max Collector Current :
- 6A
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- FZT853
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Current Rating :
- 6A
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Frequency :
- 130MHz
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 3W
- Collector Base Voltage (VCBO) :
- 200V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 130MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Transistor Type :
- NPN
- Continuous Collector Current :
- 6A
- Collector Emitter Voltage (VCEO) :
- 100V
- Pbfree Code :
- No
- Published :
- 2013
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 500mA, 5A
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 340mV
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FZT853TA
FZT853TA Documents
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT853TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 500mA, 5A.A 6A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
FZT853TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 6A
a transition frequency of 130MHz
FZT853TA Applications
There are a lot of Diodes Incorporated
FZT853TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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