FZT853TA
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- Mfr.Part #
- FZT853TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A SOT223-3
- Stock
- 5,440
- In Stock ：
- 5,440
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 3W
- Terminal Form :
- Gull wing
- Power Dissipation :
- 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Length :
- 6.7mm
- Gain Bandwidth Product :
- 130MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Max Breakdown Voltage :
- 100V
- Continuous Collector Current :
- 6A
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Published :
- 2013
- Height :
- 1.65mm
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Base Part Number :
- FZT853
- Current Rating :
- 6A
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 6A
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 500mA, 5A
- Width :
- 3.7mm
- Case Connection :
- COLLECTOR
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- 340mV
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 130MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 130MHz
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 200V
- Datasheets
- FZT853TA
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT853TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 500mA, 5A.A 6A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
FZT853TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 6A
a transition frequency of 130MHz
FZT853TA Applications
There are a lot of Diodes Incorporated
FZT853TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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