FZT853TA
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- Mfr.Part #
- FZT853TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A SOT223-3
- Stock
- 5,440
- In Stock ：
- 5,440
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Max Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 500mA, 5A
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Terminations :
- 4
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 340mV
- Continuous Collector Current :
- 6A
- Max Power Dissipation :
- 3W
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 130MHz
- Polarity/Channel Type :
- NPN
- Base Part Number :
- FZT853
- Frequency :
- 130MHz
- Case Connection :
- COLLECTOR
- Current Rating :
- 6A
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 3W
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2013
- Transition Frequency :
- 130MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-261-4, TO-261AA
- Voltage - Rated DC :
- 100V
- Length :
- 6.7mm
- Weight :
- 7.994566mg
- Transistor Type :
- NPN
- Max Collector Current :
- 6A
- Collector Base Voltage (VCBO) :
- 200V
- Width :
- 3.7mm
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Height :
- 1.65mm
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Datasheets
- FZT853TA
FZT853TA Documents
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT853TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 500mA, 5A.A 6A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
FZT853TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 6A
a transition frequency of 130MHz
FZT853TA Applications
There are a lot of Diodes Incorporated
FZT853TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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