FZT869TA
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- Mfr.Part #
- FZT869TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 7A SOT223-3
- Stock
- 20,463
- In Stock ：
- 20,463
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.7mm
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 4
- Packaging :
- Cut Tape (CT)
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 1V
- Current Rating :
- 6.5A
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 25V
- Height :
- 1.65mm
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Form :
- Gull wing
- Length :
- 6.7mm
- Reach Compliance Code :
- not_compliant
- Collector Base Voltage (VCBO) :
- 60V
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 25V
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 25V
- Power Dissipation :
- 3W
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 150mA, 6.5A
- Emitter Base Voltage (VEBO) :
- 6V
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Pbfree Code :
- No
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 3W
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 7A
- Max Breakdown Voltage :
- 25V
- Mounting Type :
- Surface Mount
- Base Part Number :
- FZT869
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2000
- Weight :
- 7.994566mg
- Lead Free :
- Lead Free
- Datasheets
- FZT869TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT869TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 150mA, 6.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 6.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 7A volts.
FZT869TA Features
the DC current gain for this device is 300 @ 1A 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 350mV @ 150mA, 6.5A
the emitter base voltage is kept at 6V
the current rating of this device is 6.5A
a transition frequency of 100MHz
FZT869TA Applications
There are a lot of Diodes Incorporated
FZT869TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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