FZT851QTA
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- Mfr.Part #
- FZT851QTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A SOT223-3
- Stock
- 12,008
- In Stock ：
- 12,008
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 6A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 3W
- Reach Compliance Code :
- not_compliant
- Transition Frequency :
- 130MHz
- Factory Lead Time :
- 30 Weeks
- ECCN Code :
- EAR99
- Power - Max :
- 3W
- Vce Saturation (Max) @ Ib, Ic :
- 375mV @ 300mA, 6A
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- JESD-30 Code :
- R-PDSO-G4
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Frequency - Transition :
- 130MHz
- JESD-609 Code :
- e3
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 375mV
- Package / Case :
- TO-261-4, TO-261AA
- Number of Terminations :
- 4
- Reference Standard :
- AEC-Q101
- Case Connection :
- COLLECTOR
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- High Reliability
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Datasheets
- FZT851QTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT851QTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 375mV @ 300mA, 6A.The part has a transition frequency of 130MHz.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
FZT851QTA Features
the DC current gain for this device is 100 @ 2A 1V
the vce saturation(Max) is 375mV @ 300mA, 6A
a transition frequency of 130MHz
FZT851QTA Applications
There are a lot of Diodes Incorporated
FZT851QTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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