FZT857TA
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- Mfr.Part #
- FZT857TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 3.5A SOT223-3
- Stock
- 717
- In Stock ：
- 717
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 80MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Height :
- 1.65mm
- Power Dissipation :
- 3W
- Frequency :
- 80MHz
- Weight :
- 7.994566mg
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 3.5A
- Max Breakdown Voltage :
- 300V
- Base Part Number :
- FZT857
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Number of Pins :
- 3
- Voltage - Rated DC :
- 300V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 345mV
- JESD-30 Code :
- R-PDSO-G4
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Max Collector Current :
- 3.5A
- Case Connection :
- COLLECTOR
- Length :
- 6.7mm
- ECCN Code :
- EAR99
- Transition Frequency :
- 80MHz
- Width :
- 3.7mm
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 300V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 345mV @ 600mA, 3.5A
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 350V
- hFE Min :
- 100
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 3.5A
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 3W
- Pbfree Code :
- No
- Datasheets
- FZT857TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT857TA Overview
This device has a DC current gain of 100 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 345mV.A VCE saturation (Max) of 345mV @ 600mA, 3.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 3.5A volts is possible.
FZT857TA Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of 345mV
the vce saturation(Max) is 345mV @ 600mA, 3.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3.5A
a transition frequency of 80MHz
FZT857TA Applications
There are a lot of Diodes Incorporated
FZT857TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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