FZT857TA

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Mfr.Part #
FZT857TA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 300V 3.5A SOT223-3
Stock
717
In Stock :
717

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
350V
Number of Terminations :
4
REACH SVHC :
No SVHC
Width :
3.7mm
Height :
1.65mm
Collector Emitter Breakdown Voltage :
300V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 10V
Terminal Position :
Dual
Radiation Hardening :
No
Transistor Element Material :
SILICON
Weight :
7.994566mg
Transistor Application :
SWITCHING
Current Rating :
3.5A
Number of Pins :
3
JESD-30 Code :
R-PDSO-G4
Packaging :
Tape and Reel (TR)
Published :
2006
Contact Plating :
Tin
Collector Emitter Saturation Voltage :
345mV
Max Collector Current :
3.5A
hFE Min :
100
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Collector Current :
3.5A
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
50nA ICBO
Terminal Form :
Gull wing
Mount :
Surface Mount
Collector Emitter Voltage (VCEO) :
300V
Pbfree Code :
No
Mounting Type :
Surface Mount
Gain Bandwidth Product :
80MHz
Transition Frequency :
80MHz
Case Connection :
COLLECTOR
Polarity/Channel Type :
NPN
Max Breakdown Voltage :
300V
Voltage - Rated DC :
300V
Base Part Number :
FZT857
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
345mV @ 600mA, 3.5A
Power Dissipation :
3W
Termination :
SMD/SMT
Factory Lead Time :
15 Weeks
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-261-4, TO-261AA
ECCN Code :
EAR99
Lead Free :
Lead Free
Emitter Base Voltage (VEBO) :
6V
Max Power Dissipation :
3W
Element Configuration :
Single
Frequency :
80MHz
Length :
6.7mm
Transistor Type :
NPN
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT857TA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Number of Pins:3, Mounting Type:Surface Mount, Base Part Number:FZT857, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, FZT857TA pinout, FZT857TA datasheet PDF, FZT857TA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT857TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated FZT857TA


NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

FZT857TA Overview


This device has a DC current gain of 100 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 345mV.A VCE saturation (Max) of 345mV @ 600mA, 3.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 3.5A volts is possible.

FZT857TA Features


the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of 345mV
the vce saturation(Max) is 345mV @ 600mA, 3.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3.5A
a transition frequency of 80MHz


FZT857TA Applications


There are a lot of Diodes Incorporated
FZT857TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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