FZT857TA
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- Mfr.Part #
- FZT857TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 3.5A SOT223-3
- Stock
- 717
- In Stock ：
- 717
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- FZT857
- Weight :
- 7.994566mg
- JESD-30 Code :
- R-PDSO-G4
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 300V
- Mount :
- Surface Mount
- Length :
- 6.7mm
- Width :
- 3.7mm
- Frequency :
- 80MHz
- Max Collector Current :
- 3.5A
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 345mV @ 600mA, 3.5A
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 80MHz
- Collector Emitter Breakdown Voltage :
- 300V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 300V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 345mV
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2006
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 300V
- Max Power Dissipation :
- 3W
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Current Rating :
- 3.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 3W
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Height :
- 1.65mm
- Transition Frequency :
- 80MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- hFE Min :
- 100
- Pbfree Code :
- No
- Termination :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 3.5A
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 350V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FZT857TA
FZT857TA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT857TA Overview
This device has a DC current gain of 100 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 345mV.A VCE saturation (Max) of 345mV @ 600mA, 3.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 3.5A volts is possible.
FZT857TA Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of 345mV
the vce saturation(Max) is 345mV @ 600mA, 3.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3.5A
a transition frequency of 80MHz
FZT857TA Applications
There are a lot of Diodes Incorporated
FZT857TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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