FZT849TA
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- Mfr.Part #
- FZT849TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 7A SOT223-3
- Stock
- 4,573
- In Stock ：
- 4,573
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 100
- Length :
- 6.7mm
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 3W
- Collector Emitter Saturation Voltage :
- 350mV
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Frequency :
- 100MHz
- Max Collector Current :
- 7A
- JESD-30 Code :
- R-PDSO-G4
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- Weight :
- 7.994566mg
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Termination :
- SMD/SMT
- Terminal Position :
- Dual
- Height :
- 1.8mm
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 3W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2000
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 300mA, 6.5A
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.7mm
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 120V
- Voltage - Rated DC :
- 30V
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Max Junction Temperature (Tj) :
- 150°C
- Current Rating :
- 7A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Continuous Collector Current :
- 7A
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Base Part Number :
- FZT849
- Datasheets
- FZT849TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT849TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 300mA, 6.5A.Continuous collector voltages of 7A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 7A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 7A volts.
FZT849TA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 300mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 100MHz
FZT849TA Applications
There are a lot of Diodes Incorporated
FZT849TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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