FZT696BTA
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- Mfr.Part #
- FZT696BTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 180V 0.5A SOT223-3
- Stock
- 19,166
- In Stock ：
- 19,166
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 180V
- Factory Lead Time :
- 16 Weeks
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Frequency - Transition :
- 70MHz
- Number of Terminations :
- 4
- Collector Emitter Breakdown Voltage :
- 180V
- Mounting Type :
- Surface Mount
- Height :
- 1.65mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Collector Current :
- 500mA
- Transition Frequency :
- 70MHz
- Collector Base Voltage (VCBO) :
- 180V
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 250mV
- Weight :
- 7.994566mg
- JESD-30 Code :
- R-PDSO-G4
- Published :
- 2000
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Current Rating :
- 500mA
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 500mA
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Max Power Dissipation :
- 2W
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Width :
- 3.7mm
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- FZT696
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 180V
- Gain Bandwidth Product :
- 130MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 200mA
- Voltage - Rated DC :
- 180V
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 6.7mm
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 200mA 5V
- Pbfree Code :
- No
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Datasheets
- FZT696BTA
FZT696BTA Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT696BTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 5mA, 200mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 70MHz.Single BJT transistor can take a breakdown input voltage of 180V volts.During maximum operation, collector current can be as low as 500mA volts.
FZT696BTA Features
the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
FZT696BTA Applications
There are a lot of Diodes Incorporated
FZT696BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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