FZT649
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- Mfr.Part #
- FZT649
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 3A SOT223-4
- Stock
- 67,207
- In Stock ：
- 67,207
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 3A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Weight :
- 188mg
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 25V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Base Part Number :
- FZT649
- Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 25V
- Voltage - Rated DC :
- 25V
- Gain Bandwidth Product :
- 150MHz
- Transition Frequency :
- 150MHz
- Terminal Form :
- Gull wing
- Height :
- 1.7mm
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Collector Base Voltage (VCBO) :
- 35V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Length :
- 6.7mm
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Frequency :
- 150MHz
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 3A
- hFE Min :
- 100
- Transistor Type :
- NPN
- Published :
- 2017
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Width :
- 3.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Collector Emitter Saturation Voltage :
- 600mV
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- FZT649
FZT649 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT649 Overview
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 3A volts is possible.
FZT649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
FZT649 Applications
There are a lot of ON Semiconductor
FZT649 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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