FZT649
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- Mfr.Part #
- FZT649
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 3A SOT223-4
- Stock
- 67,207
- In Stock ：
- 67,207
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 35V
- Max Breakdown Voltage :
- 25V
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- FZT649
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 25V
- Max Power Dissipation :
- 2W
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 3A
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- hFE Min :
- 100
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Weight :
- 188mg
- Collector Emitter Saturation Voltage :
- 600mV
- Voltage - Rated DC :
- 25V
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Current Rating :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 150MHz
- Frequency :
- 150MHz
- Transition Frequency :
- 150MHz
- Height :
- 1.7mm
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 25V
- Length :
- 6.7mm
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Published :
- 2017
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Width :
- 3.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Datasheets
- FZT649
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT649 Overview
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 3A volts is possible.
FZT649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
FZT649 Applications
There are a lot of ON Semiconductor
FZT649 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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