FZT605TA
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- Mfr.Part #
- FZT605TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 1.5A SOT223
- Stock
- 53,262
- In Stock ：
- 53,262
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2012
- Termination :
- SMD/SMT
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 150MHz
- Number of Terminations :
- 4
- Factory Lead Time :
- 15 Weeks
- Max Breakdown Voltage :
- 120V
- hFE Min :
- 5000
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 3.7mm
- Transition Frequency :
- 150MHz
- Voltage - Rated DC :
- 120V
- JESD-30 Code :
- R-PDSO-G4
- Collector Emitter Voltage (VCEO) :
- 120V
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Collector Emitter Saturation Voltage :
- 1V
- Height :
- 1.65mm
- Base Part Number :
- FZT605
- Collector Base Voltage (VCBO) :
- 140V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 7.994566mg
- Max Collector Current :
- 1.5A
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 10V
- Pin Count :
- 4
- Current Rating :
- 2A
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Transistor Type :
- NPN - Darlington
- REACH SVHC :
- No SVHC
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 10μA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Length :
- 6.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 1A 5V
- Polarity :
- NPN
- Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 120V
- Max Power Dissipation :
- 2W
- Continuous Collector Current :
- 1.5A
- Contact Plating :
- Tin
- Datasheets
- FZT605TA
NPN - Darlington -55°C~150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT605TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 1A 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 1mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1.5A for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 120V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
FZT605TA Features
the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 2A
a transition frequency of 150MHz
FZT605TA Applications
There are a lot of Diodes Incorporated
FZT605TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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