FZT603TA
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- Mfr.Part #
- FZT603TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 2A SOT223-3
- Stock
- 1,527
- In Stock ：
- 1,527
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 2A
- Polarity :
- NPN
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Frequency - Transition :
- 150MHz
- Max Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 10V
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 80V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 500mA 5V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1.13V @ 20mA, 2A
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.7mm
- Voltage - Rated DC :
- 80V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Height :
- 1.65mm
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 10μA
- Published :
- 2006
- Transistor Type :
- NPN - Darlington
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2W
- Width :
- 3.7mm
- Continuous Collector Current :
- 2A
- JESD-30 Code :
- R-PDSO-G4
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1.13V
- Base Part Number :
- FZT603
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transition Frequency :
- 150MHz
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- FZT603TA
NPN - Darlington -55°C~150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT603TA Overview
This device has a DC current gain of 5000 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.13V.A VCE saturation (Max) of 1.13V @ 20mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 2A volts is possible.
FZT603TA Features
the DC current gain for this device is 5000 @ 500mA 5V
a collector emitter saturation voltage of 1.13V
the vce saturation(Max) is 1.13V @ 20mA, 2A
the emitter base voltage is kept at 10V
the current rating of this device is 2A
a transition frequency of 150MHz
FZT603TA Applications
There are a lot of Diodes Incorporated
FZT603TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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