FZT600TA
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- Mfr.Part #
- FZT600TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 140V 2A SOT223-3
- Stock
- 200
- In Stock ：
- 200
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- FZT600
- Polarity :
- NPN
- Transition Frequency :
- 250MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10μA
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Collector Emitter Breakdown Voltage :
- 140V
- Number of Terminations :
- 4
- Frequency - Transition :
- 250MHz
- Published :
- 2006
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 10V
- Max Breakdown Voltage :
- 140V
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 160V
- Weight :
- 7.994566mg
- Max Power Dissipation :
- 2W
- Transistor Application :
- SWITCHING
- Width :
- 3.55mm
- JESD-30 Code :
- R-PDSO-G4
- Collector Emitter Saturation Voltage :
- 1.1V
- hFE Min :
- 2000
- Current Rating :
- 2A
- Transistor Element Material :
- SILICON
- Height :
- 1.65mm
- Length :
- 6.55mm
- Collector Emitter Voltage (VCEO) :
- 140V
- Power Dissipation :
- 2W
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 10mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 140V
- Terminal Form :
- Gull wing
- Datasheets
- FZT600TA
NPN - Darlington -55°C~150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT600TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 10mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.In the part, the transition frequency is 250MHz.This device can take an input voltage of 140V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
FZT600TA Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 2A
a transition frequency of 250MHz
FZT600TA Applications
There are a lot of Diodes Incorporated
FZT600TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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