FZT649TA
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- Mfr.Part #
- FZT649TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 3A SOT223-3
- Stock
- 826
- In Stock ：
- 826
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 240MHz
- Voltage :
- 25V
- Base Part Number :
- FZT649
- Power Dissipation :
- 2W
- Package / Case :
- TO-261-4, TO-261AA
- Reach Compliance Code :
- not_compliant
- Current :
- 3A
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 25V
- Voltage - Rated DC :
- 25V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 3A
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 25V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Length :
- 6.7mm
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Weight :
- 7.994566mg
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 2W
- Packaging :
- Cut Tape (CT)
- Frequency :
- 240MHz
- Pbfree Code :
- No
- Collector Emitter Saturation Voltage :
- 400mV
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 35V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Published :
- 2006
- Contact Plating :
- Tin
- Max Collector Current :
- 3A
- Transition Frequency :
- 240MHz
- Current Rating :
- 3A
- Collector Emitter Voltage (VCEO) :
- 25V
- Width :
- 3.7mm
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Height :
- 1.65mm
- Datasheets
- FZT649TA
FZT649TA Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT649TA Overview
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 3A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 240MHz.As a result, it can handle voltages as low as 25V volts.The maximum collector current is 3A volts.
FZT649TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 240MHz
FZT649TA Applications
There are a lot of Diodes Incorporated
FZT649TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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