FZT600BTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Width :

3.55mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 500mA 10V

Height :

1.65mm

ECCN Code :

EAR99

Frequency - Transition :

250MHz

Transistor Type :

NPN - Darlington

Package / Case :

TO-261-4, TO-261AA

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Max Collector Current :

2A

Pbfree Code :

yes

Published :

2001

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 10mA, 1A

Collector Emitter Saturation Voltage :

1.2V

Collector Emitter Breakdown Voltage :

140V

Factory Lead Time :

12 Weeks

Current - Collector Cutoff (Max) :

10μA

Case Connection :

COLLECTOR

Pin Count :

4

JESD-30 Code :

R-PDSO-G4

Voltage - Rated DC :

140V

Transition Frequency :

250MHz

Element Configuration :

Single

Base Part Number :

FZT600

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Max Power Dissipation :

2W

Number of Elements :

1

Length :

6.55mm

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

140V

Polarity :

NPN

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

10V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

4

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

160V

Weight :

7.994566mg

Max Breakdown Voltage :

140V

Transistor Application :

SWITCHING

Current Rating :

2A

Terminal Position :

Dual