FZT689BTA
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- Mfr.Part #
- FZT689BTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 3A SOT223-3
- Stock
- 862
- In Stock ：
- 862
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Published :
- 1997
- Collector Emitter Breakdown Voltage :
- 20V
- Length :
- 6.7mm
- Voltage - Rated DC :
- 20V
- Max Power Dissipation :
- 2W
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.65mm
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- TO-261-4, TO-261AA
- Current Rating :
- 3A
- Weight :
- 7.994566mg
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 150MHz
- Continuous Collector Current :
- 3A
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 20V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Width :
- 3.7mm
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 20mA, 3A
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-30 Code :
- R-PDSO-G4
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 20V
- Factory Lead Time :
- 13 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 2A 2V
- Collector Emitter Saturation Voltage :
- 500mV
- Transition Frequency :
- 150MHz
- Base Part Number :
- FZT689
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Datasheets
- FZT689BTA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT689BTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 2A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 20mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at 3A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
FZT689BTA Features
the DC current gain for this device is 400 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 450mV @ 20mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
FZT689BTA Applications
There are a lot of Diodes Incorporated
FZT689BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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