FZT688BTA

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Mfr.Part #
FZT688BTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 12V 4A SOT223-3
Stock
8,176
In Stock :
8,176

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
2W
Terminal Form :
Gull wing
Frequency :
150MHz
Factory Lead Time :
15 Weeks
Packaging :
Tape and Reel (TR)
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
400mV
Element Configuration :
Single
Voltage - Rated DC :
12V
Mounting Type :
Surface Mount
Published :
2006
Base Part Number :
FZT688
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 3A 2V
Terminal Position :
Dual
Max Collector Current :
4A
Current Rating :
4A
JESD-609 Code :
e3
Power Dissipation :
2W
Number of Terminations :
4
Case Connection :
COLLECTOR
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 4A
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
No
Package / Case :
TO-261-4, TO-261AA
Collector Emitter Breakdown Voltage :
12V
Max Breakdown Voltage :
12V
Gain Bandwidth Product :
150MHz
Transition Frequency :
150MHz
Collector Base Voltage (VCBO) :
12V
Time@Peak Reflow Temperature-Max (s) :
40
Width :
3.7mm
Collector Emitter Voltage (VCEO) :
12V
Terminal Finish :
Matte Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Current - Collector Cutoff (Max) :
100nA ICBO
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
7.994566mg
ECCN Code :
EAR99
Number of Pins :
4
Length :
6.7mm
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Continuous Collector Current :
4A
Polarity/Channel Type :
NPN
Number of Elements :
1
Radiation Hardening :
No
Transistor Application :
SWITCHING
Height :
1.65mm
Datasheets
FZT688BTA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT688BTA from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:FZT688, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, FZT688BTA pinout, FZT688BTA datasheet PDF, FZT688BTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT688BTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated FZT688BTA


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

FZT688BTA Overview


This device has a DC current gain of 400 @ 3A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 4A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 12V volts.The maximum collector current is 4A volts.

FZT688BTA Features


the DC current gain for this device is 400 @ 3A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 50mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 150MHz


FZT688BTA Applications


There are a lot of Diodes Incorporated
FZT688BTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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