FZT658TC
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- Mfr.Part #
- FZT658TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.5A SOT223-3
- Stock
- 21,365
- In Stock ：
- 21,365
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Continuous Collector Current :
- 500mA
- Base Part Number :
- FZT658
- Reach Compliance Code :
- Unknown
- Max Collector Current :
- 500mA
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 400V
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 400V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- MATTE TIN
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Current Rating :
- 500mA
- HTS Code :
- 8541.29.00.75
- Weight :
- 7.994566mg
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 400V
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Transition Frequency :
- 50MHz
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 10V
- Lead Free :
- Lead Free
- Configuration :
- Single
- Max Power Dissipation :
- 2W
- JESD-30 Code :
- R-PDSO-G4
- Datasheets
- FZT658TC
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT658TC Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 500mA volts.
FZT658TC Features
the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
FZT658TC Applications
There are a lot of Diodes Incorporated
FZT658TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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