FZT658TA
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- Mfr.Part #
- FZT658TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.5A SOT223-3
- Stock
- 249
- In Stock ：
- 249
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 400V
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 400V
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- 500mV
- Gain Bandwidth Product :
- 50MHz
- Max Collector Current :
- 500mA
- Continuous Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Current Rating :
- 500mA
- Power Dissipation :
- 2W
- Published :
- 2006
- Pbfree Code :
- No
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.65mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 10V
- Frequency :
- 50MHz
- Package / Case :
- TO-261-4, TO-261AA
- Number of Pins :
- 4
- Transition Frequency :
- 50MHz
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 400V
- Terminal Form :
- Gull wing
- Base Part Number :
- FZT658
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.7mm
- Collector Base Voltage (VCBO) :
- 400V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.7mm
- Weight :
- 7.994566mg
- Datasheets
- FZT658TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT658TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 500mA volts.
FZT658TA Features
the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
FZT658TA Applications
There are a lot of Diodes Incorporated
FZT658TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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