FZT657TA
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- Mfr.Part #
- FZT657TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT223-3
- Stock
- 4,506
- In Stock ：
- 4,506
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 30MHz
- Number of Pins :
- 4
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 300V
- Width :
- 3.7mm
- Transistor Application :
- SWITCHING
- Length :
- 6.7mm
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 300V
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 300V
- Continuous Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Cut Tape (CT)
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Current Rating :
- 500mA
- Max Breakdown Voltage :
- 300V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Weight :
- 7.994566mg
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 30MHz
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 30MHz
- Height :
- 1.65mm
- Voltage - Rated DC :
- 300V
- Contact Plating :
- Tin
- Power Dissipation :
- 2W
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- FZT657
- Pbfree Code :
- No
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 2W
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Datasheets
- FZT657TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT657TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 5V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
FZT657TA Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz
FZT657TA Applications
There are a lot of Diodes Incorporated
FZT657TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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