FZT657TA
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- Mfr.Part #
- FZT657TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT223-3
- Stock
- 4,506
- In Stock ：
- 4,506
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Height :
- 1.65mm
- Transition Frequency :
- 30MHz
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Voltage - Rated DC :
- 300V
- Continuous Collector Current :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Element Configuration :
- Single
- Weight :
- 7.994566mg
- Frequency :
- 30MHz
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Length :
- 6.7mm
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 30MHz
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Published :
- 2006
- Width :
- 3.7mm
- Mount :
- Surface Mount
- Power Dissipation :
- 2W
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 300V
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Packaging :
- Cut Tape (CT)
- Max Breakdown Voltage :
- 300V
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 300V
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- FZT657
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Transistor Type :
- NPN
- Current Rating :
- 500mA
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- FZT657TA
FZT657TA Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT657TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 5V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
FZT657TA Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz
FZT657TA Applications
There are a lot of Diodes Incorporated
FZT657TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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