FZT655TA
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- Mfr.Part #
- FZT655TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A SOT223-3
- Stock
- 48,451
- In Stock ：
- 48,451
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 150V
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Voltage :
- 150V
- Number of Elements :
- 1
- Continuous Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- 150V
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 150V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Length :
- 6.7mm
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 5V
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 150V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Base Part Number :
- FZT655
- Terminal Position :
- Dual
- Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- 180mV
- Published :
- 2006
- Transition Frequency :
- 30MHz
- Current :
- 1A
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 1A
- Package / Case :
- TO-261-4, TO-261AA
- Gain Bandwidth Product :
- 30MHz
- Frequency :
- 30MHz
- Mounting Type :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Width :
- 3.7mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 4
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Height :
- 1.65mm
- Voltage - Rated DC :
- 150V
- Element Configuration :
- Single
- Datasheets
- FZT655TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT655TA Overview
This device has a DC current gain of 50 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 180mV.A VCE saturation (Max) of 500mV @ 200mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 30MHz.A breakdown input voltage of 150V volts can be used.A maximum collector current of 1A volts is possible.
FZT655TA Features
the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 30MHz
FZT655TA Applications
There are a lot of Diodes Incorporated
FZT655TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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