FZT653TA
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- Mfr.Part #
- FZT653TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A SOT223-3
- Stock
- 6,865
- In Stock ：
- 6,865
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Transistor Type :
- NPN
- Weight :
- 7.994566mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 175MHz
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 230mV
- Height :
- 1.65mm
- Voltage - Rated DC :
- 100V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Power Dissipation :
- 2W
- Current Rating :
- 2A
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 120V
- Frequency :
- 175MHz
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Max Power Dissipation :
- 2W
- Length :
- 6.7mm
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Voltage :
- 100V
- Factory Lead Time :
- 15 Weeks
- Packaging :
- Cut Tape (CT)
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 175MHz
- Base Part Number :
- FZT653
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Continuous Collector Current :
- 2A
- Max Collector Current :
- 2A
- Published :
- 2013
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 100V
- Current :
- 2A
- Max Breakdown Voltage :
- 100V
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Width :
- 3.7mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- FZT653TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT653TA Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 230mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 175MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
FZT653TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz
FZT653TA Applications
There are a lot of Diodes Incorporated
FZT653TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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