FZT651TA
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- Mfr.Part #
- FZT651TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A SOT223-3
- Stock
- 88,250
- In Stock ：
- 88,250
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2012
- Voltage :
- 60V
- Current Rating :
- 3A
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2W
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Factory Lead Time :
- 15 Weeks
- ECCN Code :
- EAR99
- Power Dissipation :
- 2W
- Base Part Number :
- FZT651
- Collector Base Voltage (VCBO) :
- 80V
- Voltage - Rated DC :
- 60V
- Gain Bandwidth Product :
- 175MHz
- Number of Terminations :
- 4
- Termination :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 175MHz
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 175MHz
- Width :
- 3.7mm
- Length :
- 6.7mm
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 1.8mm
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 3A
- Packaging :
- Cut Tape (CT)
- Continuous Collector Current :
- 3A
- hFE Min :
- 100
- Current :
- 3A
- Max Junction Temperature (Tj) :
- 150°C
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 430mV
- Max Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Datasheets
- FZT651TA
FZT651TA Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT651TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 2V.The collector emitter saturation voltage is 430mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 175MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
FZT651TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 175MHz
FZT651TA Applications
There are a lot of Diodes Incorporated
FZT651TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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