FQU2N90TU-WS

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Mfr.Part #
FQU2N90TU-WS
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 900V 1.7A IPAK
Stock
31,309
In Stock :
31,309

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
1.7A
Mount :
Through Hole
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
1.7A Tc
Fall Time (Typ) :
30 ns
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Elements :
1
Rise Time :
35ns
Gate to Source Voltage (Vgs) :
30V
Power Dissipation :
2.5W
Input Capacitance (Ciss) (Max) @ Vds :
500pF @ 25V
JESD-609 Code :
e3
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Weight :
343.08mg
Factory Lead Time :
6 Weeks
FET Type :
N-Channel
Vgs (Max) :
±30V
Element Configuration :
Single
Power Dissipation-Max :
2.5W Ta 50W Tc
Mounting Type :
Through Hole
Series :
QFET®
Rds On (Max) @ Id, Vgs :
7.2 Ω @ 850mA, 10V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Turn-Off Delay Time :
20 ns
Drain to Source Breakdown Voltage :
900V
Turn On Delay Time :
15 ns
Number of Pins :
3
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Datasheets
FQU2N90TU-WS
Introducing Transistors - FETs, MOSFETs - Single onsemi FQU2N90TU-WS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, FQU2N90TU-WS pinout, FQU2N90TU-WS datasheet PDF, FQU2N90TU-WS amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQU2N90TU-WS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQU2N90TU-WS


N-Channel Tube 7.2 Ω @ 850mA, 10V ±30V 500pF @ 25V 15nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

FQU2N90TU-WS Overview


A device's maximum input capacitance is 500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

FQU2N90TU-WS Features


a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 20 ns


FQU2N90TU-WS Applications


There are a lot of ON Semiconductor
FQU2N90TU-WS applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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