FQU2N60CTU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Height :

6.1mm

Transistor Element Material :

SILICON

Weight :

343.08mg

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Turn On Delay Time :

9 ns

Number of Terminations :

3

Published :

2005

Continuous Drain Current (ID) :

1.9A

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Width :

2.3mm

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Mount :

Through Hole

Contact Plating :

Tin

JESD-609 Code :

e3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Turn-Off Delay Time :

24 ns

Transistor Application :

SWITCHING

Number of Elements :

1

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

7.6A

Lead Free :

Lead Free

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

600V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Rise Time :

25ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 950mA, 10V

Qualification Status :

Not Qualified

Factory Lead Time :

6 Weeks

Resistance :

4.7ohm

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

2.5W

Voltage - Rated DC :

600V

Packaging :

Tube

Length :

6.6mm

Vgs (Max) :

±30V

Pbfree Code :

yes

Current Rating :

1.9A

Power Dissipation-Max :

2.5W Ta 44W Tc

Fall Time (Typ) :

28 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA