FQU2N100TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

9 Ω @ 800mA, 10V

Series :

QFET®

Turn-Off Delay Time :

25 ns

FET Type :

N-Channel

Number of Elements :

1

Mount :

Through Hole

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

6.4A

Weight :

343.08mg

Height :

7.57mm

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

9Ohm

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Fall Time (Typ) :

35 ns

Factory Lead Time :

7 Weeks

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

1kV

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Lead Free :

Lead Free

Power Dissipation-Max :

2.5W Ta 50W Tc

Drain to Source Voltage (Vdss) :

1000V

Contact Plating :

Tin

Power Dissipation :

2.5W

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

13 ns

Radiation Hardening :

No

Published :

2013

Number of Terminations :

3

Transistor Element Material :

SILICON

Width :

2.5mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

1.6A

Voltage - Rated DC :

1kV

Element Configuration :

Single

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Pbfree Code :

yes

Continuous Drain Current (ID) :

1.6A

Mounting Type :

Through Hole

Length :

6.8mm

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Rise Time :

30ns