FQU2N90TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Avalanche Energy Rating (Eas) :

170 mJ

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

1.7A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Pulsed Drain Current-Max (IDM) :

6.8A

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

900V

Series :

QFET®

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta 50W Tc

DS Breakdown Voltage-Min :

900V

FET Type :

N-Channel

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

7.2 Ω @ 850mA, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Reach Compliance Code :

Unknown

Number of Terminations :

3