FQU2N80TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

1.8A

Avalanche Energy Rating (Eas) :

180 mJ

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Number of Terminations :

3

FET Type :

N-Channel

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Qualification Status :

COMMERCIAL

Number of Elements :

1

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta 50W Tc

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 900mA, 10V

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

DS Breakdown Voltage-Min :

800V

Pulsed Drain Current-Max (IDM) :

7.2A

Pbfree Code :

yes

Surface Mount :

No

Pin Count :

3

Drain to Source Voltage (Vdss) :

800V

RoHS Status :

ROHS3 Compliant