FQU2N50BTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Rds On (Max) @ Id, Vgs :

5.3 Ω @ 800mA, 10V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

2.5W

Transistor Element Material :

SILICON

Number of Terminations :

3

Rise Time :

25ns

Element Configuration :

Single

Weight :

343.08mg

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta 30W Tc

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Mount :

Through Hole

Pbfree Code :

yes

Turn-Off Delay Time :

10 ns

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Continuous Drain Current (ID) :

1.6A

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

6 ns

Factory Lead Time :

8 Weeks

FET Type :

N-Channel

Number of Pins :

3

Drain to Source Breakdown Voltage :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

20 ns

Transistor Application :

SWITCHING

Radiation Hardening :

No

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Pulsed Drain Current-Max (IDM) :

6.4A

Series :

QFET®

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1