FQU2N90TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

6.8A

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

900V

Avalanche Energy Rating (Eas) :

170 mJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

1.7A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Number of Terminations :

3

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Series :

QFET®

Rds On (Max) @ Id, Vgs :

7.2 Ω @ 850mA, 10V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

900V

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 50W Tc

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

Not Applicable