FQU2N50BTU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Pulsed Drain Current-Max (IDM) :

6.4A

Transistor Element Material :

SILICON

FET Type :

N-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-609 Code :

e3

Pbfree Code :

yes

Series :

QFET®

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

5.3 Ω @ 800mA, 10V

Fall Time (Typ) :

20 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Rise Time :

25ns

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Mounting Type :

Through Hole

Power Dissipation :

2.5W

Vgs (Max) :

±30V

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Number of Elements :

1

Turn On Delay Time :

6 ns

Radiation Hardening :

No

Element Configuration :

Single

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1.6A

Factory Lead Time :

8 Weeks

Weight :

343.08mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Power Dissipation-Max :

2.5W Ta 30W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V