FQU2N60CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation-Max :

2.5W Ta 44W Tc

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Qualification Status :

Not Qualified

Published :

2005

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate to Source Voltage (Vgs) :

30V

Weight :

343.08mg

Fall Time (Typ) :

28 ns

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

600V

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Number of Elements :

1

FET Type :

N-Channel

Pbfree Code :

yes

Turn-Off Delay Time :

24 ns

Lead Free :

Lead Free

Contact Plating :

Tin

Width :

2.3mm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

4.7ohm

Continuous Drain Current (ID) :

1.9A

Mount :

Through Hole

Transistor Application :

SWITCHING

Series :

QFET®

Voltage - Rated DC :

600V

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

7.6A

Height :

6.1mm

Transistor Element Material :

SILICON

Number of Terminations :

3

Length :

6.6mm

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Rise Time :

25ns

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 950mA, 10V

JESD-609 Code :

e3

Power Dissipation :

2.5W

Turn On Delay Time :

9 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

1.9A