FQP9P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drain to Source Breakdown Voltage :

-250V

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

150ns

JESD-609 Code :

e3

Mounting Type :

Through Hole

Series :

QFET®

Avalanche Energy Rating (Eas) :

650 mJ

Resistance :

620mOhm

Lead Free :

Lead Free

Packaging :

Tube

Turn-Off Delay Time :

45 ns

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Voltage - Rated DC :

-250V

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Width :

4.7mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

620m Ω @ 4.7A, 10V

Vgs (Max) :

±30V

Power Dissipation-Max :

120W Tc

FET Type :

P-Channel

Continuous Drain Current (ID) :

9.4A

Current Rating :

-9.4A

Drain to Source Voltage (Vdss) :

250V

Number of Terminations :

3

Length :

10.67mm

Turn On Delay Time :

20 ns

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Height :

16.3mm

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

65 ns

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

120W

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Weight :

1.8g

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ