FQP9N50
- Mfr.Part #
- FQP9N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 9A TO220-3
- Stock
- 26,884
- In Stock :
- 26,884
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 500V
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Rds On (Max) @ Id, Vgs :
- 730m Ω @ 4.5A, 10V
- Drain Current-Max (Abs) (ID) :
- 9A
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 500V
- Surface Mount :
- No
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 36A
- Terminal Finish :
- MATTE TIN
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Drain-source On Resistance-Max :
- 0.73Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 147W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- QFET®
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JEDEC-95 Code :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.45pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Datasheets
- FQP9N50

N-Channel Tube 730m Ω @ 4.5A, 10V ±30V 1.45pF @ 25V 36nC @ 10V 500V TO-220-3
FQP9N50 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 360 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.45pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 36A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQP9N50 Features
the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 36A.
a 500V drain to source voltage (Vdss)
FQP9N50 Applications
There are a lot of Rochester Electronics, LLC
FQP9N50 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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