FQP9N50

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Mfr.Part #
FQP9N50
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 9A TO220-3
Stock
26,884
In Stock :
26,884

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
500V
Qualification Status :
COMMERCIAL
Pin Count :
3
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Rds On (Max) @ Id, Vgs :
730m Ω @ 4.5A, 10V
Drain Current-Max (Abs) (ID) :
9A
Pbfree Code :
yes
JESD-609 Code :
e3
Packaging :
Tube
DS Breakdown Voltage-Min :
500V
Surface Mount :
No
Vgs (Max) :
±30V
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
36A
Terminal Finish :
MATTE TIN
Avalanche Energy Rating (Eas) :
360 mJ
Drain-source On Resistance-Max :
0.73Ohm
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
147W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
QFET®
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
5V @ 250μA
JEDEC-95 Code :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
1.45pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Package / Case :
TO-220-3
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
Not Applicable
Datasheets
FQP9N50
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP9N50 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, FQP9N50 pinout, FQP9N50 datasheet PDF, FQP9N50 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP9N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQP9N50


N-Channel Tube 730m Ω @ 4.5A, 10V ±30V 1.45pF @ 25V 36nC @ 10V 500V TO-220-3

FQP9N50 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 360 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.45pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 36A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FQP9N50 Features


the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 36A.
a 500V drain to source voltage (Vdss)


FQP9N50 Applications


There are a lot of Rochester Electronics, LLC
FQP9N50 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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