FQP9N50C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

QFET®

Dual Supply Voltage :

500V

Number of Terminations :

3

Drain-source On Resistance-Max :

0.8Ohm

FET Type :

N-Channel

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

9A

Turn-Off Delay Time :

93 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Weight :

1.8g

Element Configuration :

Single

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Fall Time (Typ) :

64 ns

Drain to Source Breakdown Voltage :

500V

Current Rating :

9A

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

Nominal Vgs :

4 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

65ns

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 25V

Terminal Finish :

Tin (Sn)

Power Dissipation :

135W

Voltage - Rated DC :

500V

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Packaging :

Tube

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Number of Pins :

3

Termination :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2003

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

9A

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Power Dissipation-Max :

135W Tc

Number of Elements :

1

Transistor Application :

SWITCHING