FQP9N50C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.5A, 10V

Rise Time :

65ns

Packaging :

Tube

Drain to Source Breakdown Voltage :

500V

Termination :

Through Hole

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Terminations :

3

JESD-609 Code :

e3

Power Dissipation :

135W

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

500V

Series :

QFET®

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 25V

Vgs (Max) :

±30V

Dual Supply Voltage :

500V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

9A

Element Configuration :

Single

FET Type :

N-Channel

Nominal Vgs :

4 V

Power Dissipation-Max :

135W Tc

Transistor Application :

SWITCHING

Mount :

Through Hole

Continuous Drain Current (ID) :

9A

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

93 ns

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

No SVHC

Fall Time (Typ) :

64 ns

Package / Case :

TO-220-3

Published :

2003

Drain-source On Resistance-Max :

0.8Ohm

Qualification Status :

Not Qualified

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED