FQP90N10V2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

6150pF @ 25V

Rds On Max :

10 MΩ

Fall Time (Typ) :

355 ns

Supplier Device Package :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

191nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Packaging :

Tube

Turn-Off Delay Time :

304 ns

Dual Supply Voltage :

100V

Element Configuration :

Single

Current Rating :

90A

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Power Dissipation :

250W

Number of Pins :

3

Power Dissipation-Max :

250W Tc

Voltage - Rated DC :

100V

Height :

9.4mm

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Published :

2005

Resistance :

10MOhm

Termination :

Through Hole

Rds On (Max) @ Id, Vgs :

10mOhm @ 45A, 10V

Nominal Vgs :

4 V

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Input Capacitance :

6.15nF

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Turn On Delay Time :

52 ns

Max Operating Temperature :

175°C

Rise Time :

492ns

Drain to Source Resistance :

10MOhm

Length :

10.1mm

Mount :

Through Hole

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Width :

4.7mm

Continuous Drain Current (ID) :

90A

Series :

QFET®

FET Type :

N-Channel

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ