FQP9N15

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

9A

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 25V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Surface Mount :

No

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.4Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Transistor Element Material :

SILICON

Series :

QFET®

Drain to Source Voltage (Vdss) :

150V

Package / Case :

TO-220-3

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

75W Tc

Pin Count :

3

Terminal Position :

Single

DS Breakdown Voltage-Min :

150V

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

80 mJ

Vgs (Max) :

±25V

Terminal Finish :

MATTE TIN

Number of Elements :

1

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Number of Terminations :

3

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

36A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL