FQP9N08L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Drain Current-Max (Abs) (ID) :

9.3A

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

55 mJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

40W Tc

Reach Compliance Code :

Unknown

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

210m Ω @ 4.65A, 10V

Number of Terminations :

3

Vgs (Max) :

±20V

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

Peak Reflow Temperature (Cel) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Package / Case :

TO-220-3

Series :

QFET®

Pulsed Drain Current-Max (IDM) :

37.2A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Surface Mount :

No

Transistor Application :

SWITCHING

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.23Ohm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

80V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain to Source Voltage (Vdss) :

80V